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APT29F80J
800V, 29A, 0.21 Max, trr 370ns
N-Channel FREDFET
POWER MOS 8(R) is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
S G D
S
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
file # E145592
APT29F80J
G
D
Single die FREDFET
S
FEATURES
* Fast switching with low EMI * Low trr for high reliability * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full full bridge * Half bridge * PFC and other boost converter * Buck converter * Single and two switch forward * Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 31 19 173 30 1979 24
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.)
Min
Typ
Max 543 0.23
Unit W C/W C V
Rev B 5-2009 050-8171
0.15 -55 2500 1.03 29.2 10 1.1 150
oz g in*lbf N*m
Package Weight
Torque
Terminals and Mounting Screws.
Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ = 25C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 24A VGS = VDS, ID = 2.5mA VDS = 800V VGS = 0V TJ = 25C TJ = 125C
APT29F80J
Typ 1.41 0.19 4 -10 Max Unit V V/C V mV/C A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 800
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
2.5
0.21 5 250 1000 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25C unless otherwise specified
Test Conditions
VDS = 50V, ID = 24A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 43 9326 159 927 438
Max
Unit S
pF
VGS = 0V, VDS = 0V to 533V
5
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 24A, VDS = 400V Resistive Switching VDD = 533V, ID = 24A RG = 2.2 6 , VGG = 15V
217 303 51 155 53 76 231 67
nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 31
Unit
G S
A 173 1.0 370 710 1.91 5.18 12 18 25 V ns C A V/ns
ISD = 24A, TJ = 25C, VGS = 0V TJ = 25C TJ = 125C ISD = 24A 3 diSD/dt = 100A/s TJ = 25C TJ = 125C TJ = 25C TJ = 125C ISD 24A, di/dt 1000A/s, VDD = 100V, TJ = 125C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 6.9mH, RG = 25, IAS = 24A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.27E-7/VDS^2 + 1.01E-7/VDS + 1.43E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein. 5-2009 050-8171 Rev B
Typical Performance Curves
100 90 80 ID, DRAIN CURRENT (A) 70 60 50 40 30 20 10 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 1, Output Characteristics 0 TJ= 150C TJ= 125C ID, DRAIN CURRENT (A) TJ= 25C
V
GE
APT29F80J
60 TJ= 55C 50 40 30 20 10 5V
T = 125C
J
= 10V
10 & 15V
6 & 6.5V 5.5V
4.5V 4V 0 5 10 15 20 25 30 35 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Output Characteristics
VDS> ID(ON) x RDS(ON) MAX.
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0
NORMALIZED TO VGS = 10V @ 24A
160 140 120 100 80 60 40 TJ= 125C 20 TJ= 25C
250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
ID, DRAIN CURRENT (A)
TJ= 55C
60 g fs, TRANSCONDUCTANCE 50 40 30 20 10 0
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 3, RDS(ON) vs Junction Temperature
TJ = -55C
0
0
0
10,000
2 4 6 8 VGS , GATE-TO-SOURCE VOLTAGE (V) FIGURE 4, Transfer Characteristics Ciss
10
C, CAPACITANCE (pF)
TJ = 25C TJ = 125C
1,000
Coss 100 Crss
0
5
10
15
20
25
30
35
10
0
200
400
600
80
ID, DRAIN CURRENT (A) FIGURE 5, Gain vs Drain Current VGS, GATE-TOSOURCE VOLTAGE (V) 12
ID = 31A
VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 6, CAPACITANCE VS DRAIN-TO-SOURCE VOLTAGE 200
10 8 6 4 2 0
VDS = 120V VDS = 300V
ISD, REVERSE DRAIN CURRENT (A)
160
120
VDS = 480V
TJ = 25C
40
TJ = 150C
0.4 0.8 1.2 1.6 VSD, SOURCE-TO-DRAIN VOLTAGE (V) FIGURE 8, Reverse Drain Current vs Source-to-Drain Voltage
0
050-8171
100 200 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 7, Gate Charge vs Gate-to-Source Voltage
0
0
Rev B 5-2009
80
1000
1000
APT29F80J
ID, DRAIN CURRENT (A)
IDM 13s
ID, DRAIN CURRENT (A)
100
100
IDM 13s 100s Rds(on) 1ms 10ms
10
100s 1ms Rds(on) 10ms 100ms TJ = 125C TC = 75C DC line
10
TJ = 150C TC = 25C
1
1
100ms DC line Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125
C
0.1
1
10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area
0.1
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area
0.25 ZJC, THERMAL IMPEDANCE (C/W) D = 0.9 0.20 0.7 0.15 0.5
PDM
Note:
0.10 0.3 0.05 0.1 0.05 0 10
-5
t1 t2
t1 = Pulse Duration
SINGLE PULSE 10
-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10 -3
10 -2
10 -1
1.0
RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594)
1.95 (.077) 2.14 (.084)
* Source
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
5-2009
30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Rev B
* Source Dimensions in Millimeters and (Inches)
Gate
050-8171
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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